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IXFN32N60 Datasheet
Datasheet specifications
| Datasheet's name | IXFN32N60 |
|---|---|
| File size | 200.252 KB |
| File type | |
| Number of pages | 4 |
Download Datasheet IXFN32N60 |
Download Datasheet |
|---|
Other documentations
IXF(K,N)3(2,6)N60 5 pages
Technical specifications
- Manufacturer: IXYS
- Series: HiPerFET™
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 520AW (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
- detail: N-Channel 600V 32A (Tc) 520AW (Tc) Chassis Mount SOT-227B